The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm^2/V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.
(no download is available – see journal link)